Toshiba QLC BiCS FLASH 3D Memory Introduced
Achieves World’s Largest Capacity of 1.5TB in a Single Package Toshiba America Electronic Components, Inc. (TAEC)* today announced the latest generation of its BiCS FLASHTM three-dimensional (3D) flash memory1. The newest BiCS FLASH device features 4-bit-per-cell, quadruple-level cell (QLC) technology and is the first2 3D flash memory device to do so. Toshiba’s QLC technology enables larger (768 gigabit) die capacity than the company’s third-generation 512Gb 3-bit-per-cell, triple-level cell (TLC), and pushes the boundaries of flash memory technology. Toshiba’s new QLC BiCS FLASH device features a 64-layer stacked cell structure and achieves the world’s largest die capacity3 (768Gb/96GB). QLC flash memory also enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package – featuring the industry’s largest […]
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