Samsung 3D Vertical NAND (V-NAND) Flash Memory Developed
By Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first three-dimensional 3D Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). Samsung’s new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company’s proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying […]
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